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A full list of publications can be found at the following sites: Selected Works and ResearchGate.

Book chapter: Paul J. Simmonds“Nanomaterials Properties”, Chapter 72 (pp. 2657–2706), “Handbook of Measurement in Science and Engineering, Vol. 3,” Ed. M. Kutz, Wiley, New York (2016).

  1. K.E. Sautter, C.F. Schuck, T.A. Garrett, A.E. Weltner, K.D. Vallejo, D. Ren, B. Liang, K.A. Grossklaus, T.E. Vandervelde, and P.J. Simmonds, “Self-assembly of tensile-strained Ge quantum dots on InAlAs(111)A,” Journal of Crystal Growth, 533, 125468 (2020).
  2. C.F. Schuck, S.K. Roy, T.A. Garrett, Q. Yuan, Y. Wang, C.I. Cabrera, K.A. Grossklaus, T.E. Vandervelde, B. Liang, and Paul J. Simmonds, “Anomalous Stranski-Krastanov growth of (111)-oriented quantum dots with tunable wetting layer thickness,” Scientific Reports, 9, 18179 (2019).
  3. K.D. Vallejo, T.A. Garrett, K.E. Sautter, K. Saythavy, B. Liang, and Paul J. Simmonds, “InAs(111)A homoepitaxy with molecular beam epitaxy,” J. Vac. Sci. Technol. B, 37, 061810 (2019).
  4. A.I. Savva, K. Smith, M. Lawson, S.R. Croft, A.E. Weltner, C.D. Jones, H. Bull, Paul J. Simmonds, L. Li and H.C. Xiong, “Defect Generation in TiO2 Nanotube Anodes via Heat Treatment in Various Atmospheres for Lithium-Ion Batteries,” Phys. Chem. Chem. Phys., 20, 22537 (2018).
  5. C.F. Schuck, R.A. McCown, A. Hush, A. Mello, S. Roy, J.W. Spinuzzi, B. Liang, D.L. Huffaker, and Paul J. Simmonds, “Self-assembly of (111)-oriented tensile-strained quantum dots by molecular beam epitaxy,” J. Vac. Sci. Technol. B, 36, 031803 (2018)
  6. Paul J. Simmonds, “Quantum dot growth on (111) and (110) surfaces using tensile-strained self-assembly,” Proc. SPIE 10543, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XV, 105430L (2018)
  7. Julianne A. Wenner, and Paul J. Simmonds, “Two Departments, Two Models of Interdisciplinary Peer Learning,” Journal of College Science Teaching, 47, 18 (2017)
  8. Bao-Lai Liang, Ying Wang, Su-Heng Zhang, Qing-Lin Guo, Shu-Fang Wang, Guang-Sheng Fu, Paul J. Simmonds, Zhao-Qi Wang, “Optical image processing by using a photorefractive spatial soliton waveguide,” Phys. Lett. A, 381, 1207-1212 (2017)
  9. Christopher D. Yerino, Baolai Liang, Diana L Huffaker, Paul J. Simmonds, and Minjoo Larry Lee, “Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110),” J. Vac. Sci. Technol. B, 35, 010801 (2017)
  10. Sebastian Unsleber, Michael Deppisch, Christian M. Krammel, Minh Vo, Christopher D. Yerino, Paul J. Simmonds, Minjoo Larry Lee, Paul M. Koenraad, Christian Schneider, and Sven Höfling, “Bulk AlInAs on InP(111) as a novel material system for pure single photon emission,” Opt. Express, 24, 23198 (2016)
  11. Yoon Jung Chang, Paul J. Simmonds, Brett Beekley, Mark S. Goorsky, and Jason C. S. Woo, “Selective-area growth of heavily –doped GaAs nanostubs on Si(001) by molecular beam epitaxy,” Appl. Phys. Lett., 108, 163106 (2016)
  12. Zhexin Zhao, Ramesh B. Laghumavarapu, Paul J. Simmonds, Haiming Ji, Baolai Liang, and Diana L. Huffaker, “Photoluminescence study of the effect of strain compensation on InAs/AlAsSb quantum dots,” J. Cryst. Growth, 425, 312 (2015)
  13. Bor-Chau Juang, Ramesh B. Laghumavarapu, Brandon J. Foggo, Paul J. Simmonds, Andrew Lin, Baolai Liang, and Diana L. Huffaker, “GaSb thermophotovoltaic cells grown on GaAs by molecular beam epitaxy using interfacial misfit arrays,” Appl. Phys. Lett., 106, 111101 (2015)
  14. Hai-Ming Ji, Baolai Liang, Paul J. Simmonds, Bor-Chau Juang, Tao Yang, Robert J. Young, and Diana L. Huffaker,Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence,”Appl. Phys. Lett., 106, 103104 (2015)
  15. C.D. Yerino, P.J. Simmonds, B. Liang, D. Jung, C. Schneider, S. Unsleber, M. Vo, D.L. Huffaker, S. Höfling, M. Kamp, and M.L. Lee,Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting,” Appl. Phys. Lett., 105, 251901 (2014)
  16. P.J. Simmonds, M. Sun, R.B. Laghumavarapu, B. Liang, A.G. Norman, J.-W. Luo and D.L. Huffaker, Improved quantum dot stacking for intermediate band solar cells using strain compensation,” Nanotechnology, 25, 445402 (2014) [Press1].
  17. Q.L. Guo, B.L. Liang, Y. Wang, G.Y. Deng, Y.H. Jiang, S.H. Zhang, G.S. Fu, and P.J. SimmondsPropagation characteristics of a focused laser beam in a strontium barium niobate photorefractive crystal under reverse external electric field,” Appl. Optics, 53, 6422 (2014).
  18. C.D. Yerino, P.J. Simmonds, B. Liang, V.G. Dorogan, M.E. Ware, Y.I. Mazur, D. Jung, D.L. Huffaker, G.J. Salamo, and M.L. Lee, “Tensile GaAs(111) quantum dashes with tunable luminescence below the bulk bandgap,” Appl. Phys. Lett., 105, 071912 (2014).
  19. R.B. Laghumavarapu, M. Sun, P.J. Simmonds, B. Liang, S. Hellstroem, Z. Bittner, S. Polly, S. Hubbard, A.G. Norman, J.-W. Luo, R. Welser, A.K. Sood, and D.L. Huffaker,New quantum dot nanomaterials to boost solar energy harvesting,” SPIE Newsroom. Published Online: January 24, (2014).
  20. P.J. Simmonds, C.D. Yerino, M. Sun, B. Liang, D.L. Huffaker, V.G. Dorogan, Y.I. Mazur, G.J. Salamo, and M.L. Lee, “Tuning quantum dot luminescence below the bulk bandgap using tensile strain,” ACS Nano, 7, 5017-5023 (2013).
  21. M. Sun, P.J. Simmonds, R.B. Laghumavarapu, A. Lin, C.J. Reyner, H.-S. Duan, B. Liang, and D.L. Huffaker, “Effects of GaAs(Sb) cladding layers on InAs/AlAsSb quantum dots,” Appl. Phys. Lett., 102, 023107 (2013) [Press2]
  22. P.J. Simmonds and M.L. Lee, “Tensile-strained growth on low-index GaAs,” J. Appl. Phys., 112, 054313 (2012).
  23. P.J. Simmonds, R.B. Laghumavarapu, M. Sun, A. Lin, C.J. Reyner, B. Liang, and D.L. Huffaker, “Structural and optical properties of InAs/AlAsSb quantum dots with GaAs(Sb) cladding layers,” Appl. Phys. Lett., 100, 243108 (2012).
  24. P.J. Simmonds and M.L. Lee, “Self-assembly on (111)-oriented III-V surfaces,” Appl. Phys. Lett., 99, 123111 (2011). *
  25. S. Tomasulo, J. Simon, P.J. Simmonds, J. Biagiotti and M.L. Lee, “Molecular beam epitaxy of metamorphic InyGa1-yP solar cells on mixed anion GaAsxP1-x/GaAs graded buffers,” J. Vac. Sci. Technol. B, 29, 03C118 (2011).
  26. J. Simon, P.J. Simmonds, J.M. Woodall and M.L. Lee, “Graphitized carbon on GaAs(100) substrates,” Appl. Phys. Lett., 98, 073113 (2011).
  27. P.J. Simmonds, J. Simon, J.M. Woodall and M.L. Lee, “A molecular beam epitaxy approach to the graphitization of GaAs(001) surfaces,” J. Vac. Sci. Technol. B, 29, 03C103 (2011) – [Press: paper featured in “Beneath the AVS surface”, April 2011].
  28. J. Simon, S. Tomasulo, P.J. Simmonds, M. Romero and M.L. Lee, “Metamorphic GaAsP buffers for growth of wide-bandgap InGaP solar cells,” J. Appl. Phys., 109, 013708 (2011).
  29. Y. Song, P.J. Simmonds and M.L. Lee, “Self-assembled In0.5Ga0.5As quantum dots on GaP(001),” Appl. Phys. Lett., 97, 223110 (2010). *
  30. P.J. Simmonds and M.L. Lee, “Tensile strained island growth at step-edges on GaAs(110),” Appl. Phys. Lett., 97, 153101 (2010).
  31. M.L. Lee and P.J. Simmonds, “Tensile strained III-V self-assembled nanostructures on a (110) surface,” Proc. SPIE: Nanoepitaxy, 7768, 776805 (2010).
  32. J. Simon, S. Tomasulo, P.J. Simmonds, M. Romero and M.L. Lee, “Growth of metamorphic InGaP for wide-bandgap photovoltaic junctions by MBE,” MRS Symp. Proc., 1268, EE06-04 (2010).
  33. P.J. Simmonds, S.N. Holmes, H.E. Beere, I. Farrer, F. Sfigakis, D.A. Ritchie and M. Pepper, “Molecular beam epitaxy of high mobility In0.75Ga0.25As for electron spin transport applications,” J. Vac. Sci. Technol. B, 27, 2066 (2009).
  34. M.J.W. Rodwell, M. Wistey, U. Singisetti, G. Burek, A. Gossard, S. Stemmer, R. Engel-Herbert, Y. Hwang, Y. Zheng, C. Van de Walle, C. Palmstrøm, E. Arkun, P.J. Simmonds, P. Asbeck, Y. Taur, A. Kummel, B. Yu, D. Wang, Y. Yuan, P. McIntyre, J. Harris, M.V. Fischetti and C. Sachs, “Technology development & design for 22 nm InGaAs/InP-channel MOSFETs,” Proc. 20th IEEE IPRM, 620 (2008).
  35. S.N. Holmes, P.J. Simmonds, H.E. Beere, F. Sfigakis, I. Farrer, D.A. Ritchie and M. Pepper, “Bychkov-Rashba dominated band structure in an In0.75Ga0.25As – In0.75Al0.25As device with spin-split carrier densities < 1011 cm-2,” J. Phys.: Condens. Matter, 20, 472207 (2008).
  36. P.J. Simmonds, S.N. Holmes, H.E. Beere and D.A. Ritchie, “Spin-orbit coupling in an In0.52Ga0.48As quantum well with two populated subbands,” J. Appl. Phys., 103, 124506 (2008). *
  37. P.J. Simmonds, F. Sfigakis, H.E. Beere, D.A. Ritchie, M. Pepper, D. Anderson and G.A. Jones, “Quantum transport in In0.75Ga0.25As quantum wires,” Appl. Phys. Lett., 92, 152108 (2008). *
  38. P.J. Simmonds, H.E. Beere, S.N. Holmes and D.A. Ritchie, “Growth-temperature optimization for low carrier-density In0.75Ga0.25As-based HEMTs on InP,” J. Appl. Phys., 102, 083518 (2007).
  39. H.W. Li, B.E. Kardynał, P. See, A.J. Shields, P.J. Simmonds, H.E. Beere and D.A. Ritchie, “Quantum dot resonant tunneling diode for telecom wavelength single photon detection,” Appl. Phys. Lett., 91, 073516 (2007). *
  40. P.J. Simmonds, H.W. Li, H.E. Beere, P. See, A.J. Shields and D.A. Ritchie, “Growth by molecular beam epitaxy of self-assembled InAs quantum dots on InAlAs and InGaAs lattice-matched to InP,” J. Vac. Sci. Technol. B, 25, 1044 (2007). *
  41. H.W. Li, P.J. Simmonds, H.E. Beere, B.E. Kardynał, D.A. Ritchie and A.J. Shields, “Quantum dot resonant tunneling diodes for telecom wavelength single photon detection,” Proc. SPIE, 67660N (2007).
  42. H.W. Li, P.J. Simmonds, H.E. Beere, B.E. Kardynał, P. See, D.A. Ritchie and A.J. Shields, “Optimization of quantum dot resonant tunneling diodes for fiber wavelength detection,” phys. stat. sol. (c), 3, 4035 (2006).