Kris Campbell, Ph.D.

Bio

Prof. Kris Campbell joined the Dept. of Electrical and Computer Engineering at Boise State University in 2005. She has over 20 years of experience in the areas of microelectronics, microfabrication, memristor device design and optoelectronics.  Dr. Campbell’s current research interests are in the areas of memristor devices, optically gated transistors, and quantum bit devices. She is a member of Sigma Xi, IEEE, and the American Chemical Society.

BSU has exclusively licensed all of the memristor technology developed in Dr. Campbell’s research group to Knowm, Inc. (Knowm.org). Please visit Knowm’s website for information about these memristors and their applications.

Education

University of California, Davis
Physical Chemistry
Ph.D.

University of Nevada, Las Vegas
Electrical Engineering
B.S.E.E.

Publications

Refereed Journal Articles

Drake, K., Lu, T., Majumdar, M.H.K., & Campbell, K.A. (2019) Comparison of the Electrical Response of Cu and Ag Ion-Conducting SDC Memristors Over the Temperature Range 6 K to 300 K. Micromachines 10 (10), 663.

Campbell, K. A., Bassine, R. A., Kabir, Md. F., & Astle, J. (2019). An optically gated transistor composed of amorphous M + Ge2Se3 (M = Cu or Sn) for accessing and continuously programming a memristor. ACS Appl. Electron. Mater. 1, 96-104.

Campbell, K. A. (2017). Self-directed channel memristor for high temperature operation. Microelectron. J., 59, 10–14.

Campbell, K. A., Drake, K. T., & Barney, S. (2016). Pulse Shape and Timing Dependence on the Spike-Timing Dependent Plasticity Response of Ion-Conducting Memristors as Synapses. Front Bioeng Biotechnol, 4, 97.

Huang, Y., Tang, J., Cheng, Y., Li, H., Campbell, K. A., & Han, Z. (2016). Real-Time Detection of False Data Injection in Smart Grid Networks: An Adaptive CUSUM Method and Analysis. IEEE Systems Journal, 10(2), 532–543.

Edwards, A. H., Barnaby, H. J., Campbell, K. A., Kozicki, M. N., Liu, W., & Marinella, M. J. (2015). Reconfigurable systems: Advanced applications and technologies. Proceedings of the IEEE, 103(7).

Huang, Y., Esmalifalak, M., Cheng, Y., Li, H., Campbell, K. A., & Han, Z. (2014). Adaptive Quickest Estimation Algorithm for Smart Grid Network Topology Error. IEEE Systems Journal, 8(2), 430–440.

Rodriguez, R., Lundell, S., Davis, Q., Lau, L., Poulter, B., & Campbell, K. (2014). PECVD-deposited germanium chalcogenide films for use in memory devices. Journal of the Idaho Academy of Science, 50(1), 78–79.

Rothenbuhler, A., Tran, T., Smith, E., Saxena, V., & Campbell, K. A. (2013). Reconfigurable threshold logic gates using memristive devices. Journal of Low Power Electronics and Applications, 3(2), 174–193.

Parke, S., Campbell, K., and Mouli, C. Chapter 13: Memory technologies (2013). In IEEE EDS Guide to State-of-the-Art Electron Devices, 171-187, Ed. Joachim N. Burghartz, John Wiley & Sons Ltd, United Kingdom.

Yi Huang, Yu Cheng, Husheng Li, Kristy A. Campbell, and Zhu Han “Adaptive Quickest Estimation Algorithm for Smart Grid Network Topology Error” (2013) IEEE Systems Journal, Issue 99, 1-11.

Edwards, A.H., Campbell, K., Pineda, A. (2012). Self-trapping of single and paired electrons in Ge2Se3. 24(19), (pp. 195801/1-195801/9). Journal of Physics: Condensed Matter.

Devasia, A., MacMahon, D., Raoux, S., Campbell, K., & Kurinec, S. (2012). Investigation of inter-diffusion in bilayer GeTe/SnSe phase change memory films. Thin Solid Films, 520(11) 3931-3935.

Edwards, A., Taylor, P.C., Campbell, K., Pineda, A. (2011). First-principles study of 75As NQR in arsenic chalcogenide compounds. 23(5). (pp. 055502/1-055502/11). Journal of Physics: Condensed Matter.

Devasia, A.; Kurinec, S.; Campbell, K.A.; Raoux, S. Influence of Sn Migration on phase transition in GeTe and Ge2Se3 thin films, Applied Phys. Lett. (2010), 96, 141908/1-141908/3.

Devasia, A.; Bai, F.; Davis, M.; Campbell, K. A.; Gupta, S.; Kurinec, S. Analyzing residual stress in bilayer chalcogenide Ge2Se3/SnTe films, Thin Solid Films(2009), 517, 6516-6519.

Jarvis, K. ; Carpenter, R.W. ; Davis, M. ; Campbell, K.A. An investigation of amorphous Ge2Se3 structure for phase change memory devices using fluctuation electron microscopy, Journal of Applied Physics (2009), 106, 083507-083507-5.

Campbell, K.A.; Anderson, C.M. Phase-Change Memory Devices with Stacked Ge-Chalcogenide/Sn-Chalcogenide Layers, Microelectronics Journal (2007), 38, 52-59.

Britt, R. D.; Campbell, K. A.; Peloquin, J. M.; Gilchrist, M. L.; Aznar, C. P.; Dicus, M. M.; Robblee, J.; Messinger, J. Recent pulsed EPR studies of the Photosystem II oxygen-evolving complex: implications as to water oxidation mechanisms. Biochimica et Biophysica Acta (2004), 1655, 158-171.

Hsieh, W.-Y.; Campbell, K. A.; Gregor, W.; Britt, R.D.; Yoder, D. W.; Penner-Hahn, J. E.; Pecoraro, V. L. The first spectroscopic model for the S1 state multiline signal of the OEC. Biochimica et Biophysica Acta (2004), 1655, 149-157.

Debus, R.J.; Aznar, C.; Campbell, K.A.; Gregor,W.; Diner, B.A.; Britt, R.D. Does Aspartate 170 of the D1 polypeptide ligate the Manganese Cluster in Photosystem II? An EPR and ESEEM Study. Biochemistry (2003), 42, 10600-10608.

Campbell, K.A.; Lashley, M.R.; Wyatt, J.; Nantz, M.H.; Britt, R.D. Dual-Mode EPR Study of Mn(III) Salen and the Mn(III) Salen-Catalyzed Epoxidation of cis-β-methylstyrene. Am. Chem. Soc. (2001), 123, 5710-5719.

Debus, R.J.; Campbell, K.A.; Gregor, W.; Li, Z.-L.; Burnap, R.L.; Britt, R.D. Does Histidine 332 of the D1 Polypeptide ligate the Manganese Cluster in Photosystem II? An Electron Spin Echo Envelope Modulation Study. Biochemistry (2001), 40, 3690-3699.

Peloquin, J.M.; Campbell, K.A.; Randall, D.W.; Evanchik, M.A.; Pecoraro, V.L.; Armstrong, W.H.; Britt, R.D. ⁵⁵Mn ENDOR of the S2-State Multiline EPR Signal of Photosystem II: Implications on the Structure of the Tetranuclear Mn Cluster. Am. Chem. Soc. (2000), 122, 10926-10942.

Debus, R.J.; Campbell, K.A.; Pham, D.P.; Hays, A.-M.; Britt, R.D. Glutamate 189 of the D1 Polypeptide Modulates the Magnetic and Redox Properties of the Manganese Cluster and Tyrosine YZ in Photosystem II. Biochemistry (2000), 39, 6275-6287.

Campbell, K.A.; Force, D.A.; Nixon, P.J.; Dole, F.; Diner, B.A.; Britt, R.D. Dual-Mode EPR Detects the Initial Intermediate in Photoassembly of the Photosystem II Mn Cluster: The Influence of Amino Acid Residue 170 of the D1 Polypeptide on Mn Coordination. Am. Chem. Soc. (2000), 122, 3754-3761.

Debus, R.J.; Campbell, K.A.; Peloquin, J.M.; Britt, R.D. Histidine 332 of the D1 Polypeptide Modulates the Magnetic and Redox Properties of the Manganese Cluster and Tyrosine YZ in Photosystem II. Biochemistry (2000), 39, 470-478.

Campbell, K.A.; Yikilmaz, E.; Grant, C.V.; Gregor, W.; Miller, A.-F.; Britt, R.D. Parallel Polarization EPR Characterization of the Mn(III) Center of Oxidized Manganese-Superoxide Dismutase. Am. Chem. Soc. (1999), 121, 4714-4715.

Peloquin, J. M.; Campbell, K. A.; Britt, R. D. ⁵⁵Mn Pulsed ENDOR Demonstrates that the Photosystem II ‘Split’ EPR Signal Arises from a Magnetically-Coupled Mangano-Tyrosyl Complex. Am. Chem. Soc. (1998), 120, 6840-6841.

Campbell, K. A.; Gregor, W.; Pham, D. P.; Peloquin, J. M.; Debus, R. J.; Britt, R. D. The 23 and 17 kDa proteins of photosystem II modulate the magnetic properties of the S1-state manganese cluster. Biochemistry (1998), 37, 5039-5045.

Campbell, K. A.; Peloquin, J. M.; Pham, D. P.; Debus, R. J.; Britt, R. D. Parallel polarization EPR detection of an S1-state “multiline” EPR signal in photosystem II particles from Synechocystis PCC 6803. J. Am. Chem. Soc. (1998), 120, 447-448.

Campbell, K. A.; Peloquin, J. M.; Diner, B. A.; Tang, X. S.; Chisholm, D. A.; Britt, R. D. The τ-nitrogen of D2 histidine 189 is the hydrogen bond donor to the tyrosine radical YD of photosystem II. J. Am. Chem. Soc. (1997), 119, 4787-4788.

Refereed Conference Proceedings

Haung, Y.; Li, H.; Campbell, K.; Han, Z. “Defending false data injection attack on smart grid network using adaptive CUSUM test,” Information Sciences and Systems (CISS), 2011 45th Annual Conference on, page(s): 1 – 6.

Pino, R.; Bohl, J.W.; McDonald, N.; Wysoki, B; Rozwood, P.; Campbell, K.A.; Oblea, A.S.; Timilsina, A. “Compact method for Modeling and Simulation of Memristor Devices,” IEEE/ACM Symposium on Nanoscale Architectures Nanoarch July 2010.

Oblea, A.S.; Timilsina, A.; Moore, D.; Campbell, K.A. “Silver Chalcogenide Based Memristor Devices,” International Joint Conference on Neural Networks, July 18-23,2010, Barcelona, Spain.

Edwards, A.E.; Campbell, K.A. “Density Functional Study of Ag in Ge2Se3,” IEEE Non-Volatile Memory Technology Symposium 2009, November 2009.

Gupta, S. ; Saxena, V. ; Campbell, K.A. ; Baker, R.J. “W-2W Current Steering DAC for Programming Phase Change Memory,” Microelectronics and Electron Devices, 2009. WMED 2009. IEEE Workshop on, 1 – 4

Regner, J.; Balasubramanian, M.; Cook, B.; Yingting Li; Kassayebetre, H.; Sharma, A.; Baker, R.J.; Campbell, K.A. “Integration of IC Industry Feature Sizes with University Back-End-of-Line Post Processing: Example Using a Phase-Change Memory Test Chip,”
Microelectronics and Electron Devices, 2009. WMED 2009. IEEE Workshop on
3-3 April 2009, pp. 1 – 4.

Rapole, H. ; Rajagiri, A. ; Balasubramanian, M. ; Campbell, K.A. ; Baker, R.J. “Resistive Memory Sensing Using Delta-Sigma Modulation,” Microelectronics and Electron Devices, 2009. WMED 2009. IEEE Workshop on, 4.

Ande, H.K.; Busa, P.; Balasubramanian, M.; Campbell, K.A.; Baker, R.J., “A New Approach to the Design, Fabrication, and Testing of Chalcogenide-Based Multi-State Phase-Change Nonvolatile Memory,” Proceedings of the 51^st IEEE International Midwest Symposium on Circuits and Systems, pp. 570-573, August 10-13, 2008, Knoxville, TN, USA.

Bai, F.; Gupta, S.K.; Devasia, A.-M.; Kurinec, S.; Campbell, K.A. “Investigation of phase transition in stacked Ge-Chalcogenide/Sn-Chalcogenide phase-change memory films,” Proceedings of the Materials Research Society Fall 2007 Meeting, Boston, MA, HH11.70, November 26-30 (2007).

Campbell, K.A.; Davis, M.G.; Peloquin, J.M. “Characterization of Sn, Zn, In, and Sb-containing GeSe alloys for phase-change electronic memory applications,” Materials Research Society Symposium Proceedings, 997 (Materials and Processes for Nonvolatile Memories II), (2007), 343-348.

Debus, Richard J.; Campbell, Kristy A.; Pham, Donna P.; Hays, Anna-Maria A.; Peloquin, Jeffrey M.; Britt, R. David. Influence of D1-Glu189 on the properties of YZ and the manganese cluster in photosystem 2. Photosynthesis: Mechanisms and Effects, Proceedings of the International Congress on Photosynthesis, 11th, Budapest, Aug. 17-22, 1998 (1998), 2 1375-1378.

Messinger, J.; Robblee, J.H.; Fernandez, C.; Cinco, R.M.; Visser, H.; Bergmann, U.; Glatzel, P.; Cramer, S.P.; Campbell, K.A.; Peloquin, J.M.; Britt, R.D.; Sauer, K.; Yachandra, V.; Klein, M.P. “Oxidation States and Structure of the Manganese Cluster in the S0 State of the Oxygen Evolving Complex” Proceedings of the International Congress on Photosynthesis, 11th, Budapest, Aug. 17-22, 1998 (1998), 2 1279-1282.

Patents

Over 100 US patents issued; over 100 Foreign patents issued. Some patents are listed below:

Campbell, K. A., Patent, “Memory device incorporating a resistance variable chalcogenide element”. 8,487,288. Regular, United States.

Campbell, K. A., Patent, “Continuously variable resistor”. 8,467,236. Regular, United States.

Campbell, K. A., Moore, J. T., Patent, “Silver-selenide/chalcogenide glass stack for resistance variable memory and manufacturing method thereof”. 8,466,445. Regular, United States.

Campbell, K. A., Patent, “Method of forming a memory device incorporating a resistance variable chalcogenide element”. 8,334,186, Regular, United States.

Campbell, K. A., Patent, “Forced ion migration for chalcogenide phase change memory device”. 8,295,081, Regular, United States.

Campbell, K. A., Patent, “Integratable programmable capacitive device”. 8,284,590, Regular, United States.

Campbell, K. A., Li, J., McTeer, A., Moore, J. T., Patent, “Layered resistance variable memory device and method of fabrication”. 8,263,958, Regular, United States.

Campbell, K. A., Daley, J., Patent, “Phase change current density control structure”. 8,252,622, Regular, United States.

Campbell, K. A., Patent, “Variable integrated analog resistor”. 8,238,146, Regular, United States.

Campbell, K. A., Patent, “SnSe-based limited reprogrammable cell”. 8,101,936, Regular, United States.

Other Publications

Book Chapters

Campbell, K.A. The Self-directed Channel Memristor: Operational Dependence on the Metal-Chalcogenide Layer. In Handbook of Memristor Networks (2019). Eds. Chua, L., Sirakoulis, G. Ch., Adamatzky, A., 815-842, Springer, Chennai, India.

Parke, S., Campbell, K., and Mouli, C. Chapter 13: Memory technologies (2013). In IEEE EDS Guide to State-of-the-Art Electron Devices, 171-187, Ed. Joachim N. Burghartz, John Wiley & Sons Ltd, United Kingdom.

Britt, R.D.; Peloquin, J.M.; Campbell, K.A. Pulsed and Parallel-Polarization EPR Characterization of the Manganese Cluster of the Photosystem II Oxygen Evolving Complex. (2000) Annual Review of Biophysics and Biomolecular Structure 29, 463-495.

Britt, R.D.; Force, D. A.; Campbell, K.A.; Randall, D.W.; Gilchrist, L.M.; Clemens, K.L.; Gingell, D. M.; Peloquin, J.M.; Pham, D. P.; Debus, R. J. “Progress in Characterization of the Photosystem II Oxygen Evolving Complex Using Advanced EPR Methods” in Spectroscopic Methods in Bioinorganic Chemistry, Ed. E. I. Solomon and K. O. Hodgson, ACS Symposium Series 692, 1998, pp. 272-285.

Non-Peer Reviewed Conference Proceedings

Campbell, K.A.; Davis, M.G.; Peloquin, J.M. “Chalcogenide bilayer materials used to create multi-state resistance variable devices,” Proceedings of the 62nd Northwest Regional Meeting of the American Chemical Society, Boise, ID, NW-234, June 17-20 (2007).

Bregaj, A.; Campbell, K.A. “Characterization of negative differential resistance in chalcogenide devices containing silver,” 2006 IEEE Workshop on Microelectronics and Electron Devices, Boise, Idaho, April 14, 2006.

Herring, P.K.; Campbell, K.A. “Resistance switching in SnxMnySez-based devices,” 2006 IEEE Workshop on Microelectronics and Electron Devices, Boise, Idaho, April 14, 2006.

Peloquin, Jeffrey M.; Campbell, Kristy A.; Britt, R. David. Mn pulsed ENDOR of the photosystem II “split” EPR signal. Book of Abstracts, 216th ACS National Meeting, Boston, August 23-27 (1998), INOR-472a.

Campbell, Kristy A.; Gregor, Wolfgang; Pham, Donna; Debus, Richard J.; Peloquin, Jeffrey M.; Britt, R. David. Parallel polarization EPR studies of the S1-state of the photosystem II oxygen-evolving complex. Book of Abstracts, 216th ACS National Meeting, Boston, August 23-27 (1998), INOR-472.

Research Website

Electronics and Natural Sciences Research Lab

Research Lab Capabilities

The Electronics and Natural Sciences Research laboratory is located in MEC 105B/107/108, on the first floor of the Micron Engineering Complex. Our research investigates the materials design of memristors and their operational mechanisms, as well as optically gated transistor and quantum memory bit design.

Our lab maintains a diverse array of device electrical characterization and materials characterization equipment, including high frequency, magnetic field variable, and low temperature microprobe electrical characterization microprobe stations, a Renishaw microRaman instrument, Atomic Force Microscope, n&k film thickness metrology tool, modulated differential scanning calorimeter, electron paramagnetic resonance spectrometer (Bruker ESP300), and a Leica confocal microscope.